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In this study, electric field-enhanced aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) thin films was investigated considering various current densities. Constant electric currents of 4, 5, and 6 A were applied to assess the Joule heating characteristics during specific durations (40, 15.5, and 9 s). The samples were prepared by depositing a 200-nm thick a-Si layer on a glass substrate and sputtering a 300-nm thick aluminum (Al) layer onto the a-Si layer. During the AIC process, layer exchange occured via the diffusion of silicon (Si) into the Al layer. This phenomenon was verified by the in-situ reflectivity, which was in excellent agreement with thin-film optics calculations. During the annealing, processing temperatures were lower than 470 °C, which is less than the Al-Si eutectic temperature of 577 °C. The Raman peak observed near a wavenumber of 519 cm⁻¹ revealed the formation of polycrystalline …