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Tin selenide thin films were prepared by spray pyrolysis technique using tin (II) chloride and selenourea as a precursor compounds using Se:Sn atomic ratio of 1:1 in the starting solution onto glass substrates. Deposition process was carried out in the substrate temperature range of 250 °C–400 °C using 1 ml/min flow rate. The films were investigated using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, optical absorption and thermoelectric studies. The X-ray diffraction patterns suggest that the major phase is hexagonal-SnSe₂ was present when the deposition was carried out in 275–375 °C temperature range, while for the films deposited in the below and above to this range, Sn and Se precipitates into some impure and mixed phase. Raman scattering analysis allowed the assignment of peaks at ∼180 cm⁻¹ to the hexagonal-SnSe₂ phase. The optical absorption study shows …