作者
Abdul Rahim, Eva Ryckeboer, Ananth Z Subramanian, Stéphane Clemmen, Bart Kuyken, Ashim Dhakal, Ali Raza, Artur Hermans, Muhammad Muneeb, Sören Dhoore, Yanlu Li, Utsav Dave, Peter Bienstman, Nicolas Le Thomas, Günther Roelkens, Dries Van Thourhout, Philippe Helin, Simone Severi, Xavier Rottenberg, Roel Baets
发表日期
2017/2/15
期刊
Journal of lightwave technology
卷号
35
期号
4
页码范围
639-649
出版商
IEEE
简介
The high index contrast silicon-on-insulator platform is the dominant CMOS compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications for silicon photonics instigates an interest in exploring new materials, as silicon-on-insulator has some drawbacks for these emerging applications, e.g., silicon is not transparent in the visible wavelength range. Silicon nitride is an alternate material platform. It has moderately high index contrast, and like silicon-on-insulator, it uses CMOS processes to manufacture photonic integrated circuits. In this paper, the advantages and challenges associated with these two material platforms are discussed. The case of …
引用总数
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