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We investigate the transport properties of Schottky contact structure based on zigzag phosphorene nanoribbon (ZPNR) by using the non-equilibrium Green's function formalism with density functional theory. The calculated band structures show the unpassivated ZPNR is metal and the H-passivated ZPNR is semiconductor. The in-plane contact structure of unpassivated ZPNR and H-passivated ZPNR leads to the formation of a Schottky barrier, which results in rectifying current-voltage characteristics. The rectification ratio (RR) can reach to 10³ in the bias region from 0.3 V to 0.5 V. By extending the length of H-passivated ZPNR in Schottky contact structure, the currents of the Schottky contact structure are decreased, but the RR can be enlarged obviously. When the length of H-passivated ZPNR is four times than that of the unpassivated ZPNR, the average RR increases to 10⁶ in the bias region from 0.3 V to 0.5 V and …