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This work demonstrates the construction of pn heterojunctions between mechanically exfoliated beta-phase gallium oxide (β-Ga 2 O 3) and p-GaN. The detailed mechanical exfoliation process was developed and can be used for further device applications. The atomic force microscopy study showed that the exfoliated β-Ga 2 O 3 flakes had a very smooth surface with a roughness of 0.65 nm. Transmission electron microscopy revealed a clearly defined interface between the exfoliated β-Ga 2 O 3 and p-GaN. The pn heterojunction exhibited a turn-on voltage of 3.6 V and a rectification ratio of∼ 10 5. The heterojunction also showed good thermal performance up to 200 C. Ideality factors and turn-on voltages decrease with temperature, tending toward the ideal threshold voltage of 3.2 V as determined by Silvaco simulations. This work provides valuable information on a mechanically exfoliated β-Ga 2 O 3/GaN pn …