作者
SL Qi, ZZ Chen, H Fang, YJ Sun, LW Sang, XL Yang, LB Zhao, PF Tian, JJ Deng, YB Tao, TJ Yu, ZX Qin, GY Zhang
发表日期
2009/8/17
期刊
Applied Physics Letters
卷号
95
期号
7
出版商
AIP Publishing
简介
Hot phosphor acid (H 3 PO 4) etching is presented to form a roughened surface with dodecagonal pyramids on laser lift-off N face GaN grown by metalorganic chemical vapor deposition. A detailed analysis of time evolution of surface morphology is described as a function of etching temperature. The activation energy of the H 3 PO 4 etching process is 1.25 eV, indicating the process is reaction-limited scheme. And it is found that the oblique angle between the facets and the base plane increases as the temperature increases. Thermodynamics and kinetics related factors of the formation mechanism of the dodecagonal pyramid are also discussed. The light output power of a vertical injection light-emitting-diode (LED) with proper roughened surface shows about 2.5 fold increase compared with that of LED without roughened surface.
学术搜索中的文章
SL Qi, ZZ Chen, H Fang, YJ Sun, LW Sang, XL Yang… - Applied Physics Letters, 2009