作者
Ruilong Xie, Pietro Montanini, Kerem Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, Bassem Hamieh, Daniel Corliss, Junli Wang, X Miao, J Sporre, Jody Fronheiser, Nicolas Loubet, M Sung, Stuart Sieg, Shogo Mochizuki, Christopher Prindle, S Seo, A Greene, Jeffrey Shearer, Andre Labonte, S Fan, L Liebmann, Robin Chao, A Arceo, Kisup Chung, K Cheon, Praneet Adusumilli, HP Amanapu, Z Bi, J Cha, H-C Chen, Richard Conti, R Galatage, Oleg Gluschenkov, Vimal Kamineni, K Kim, Choonghyun Lee, F Lie, Zuoguang Liu, S Mehta, Eric Miller, Hiroaki Niimi, Chengyu Niu, Chanro Park, D Park, Mark Raymond, Bhagawan Sahu, M Sankarapandian, S Siddiqui, R Southwick, Lei Sun, C Surisetty, Stan Tsai, S Whang, P Xu, Y Xu, C Yeh, P Zeitzoff, J Zhang, Juntao Li, J Demarest, John Arnold, Donald Canaperi, Derren Dunn, Nelson Felix, Dinesh Gupta, H Jagannathan, Sivananda Kanakasabapathy, Walter Kleemeier, Catherine Labelle, M Mottura, Phil Oldiges, Spyridon Skordas, T Standaert, Tenko Yamashita, Matthew Colburn, M Na, Vamsi Paruchuri, S Lian, Rama Divakaruni, T Gow, S Lee, Andreas Knorr, Huiming Bu, M Khare
发表日期
2016/12/3
研讨会论文
2016 IEEE international electron devices meeting (IEDM)
页码范围
2.7. 1-2.7. 4
出版商
IEEE
简介
We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.
学术搜索中的文章
R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran… - 2016 IEEE international electron devices meeting …, 2016