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The isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. In this account, a controlled thermal reduction–sulfurization method is used to synthesize large-area (∼1 cm²) WS₂ sheets with thicknesses ranging from monolayers to a few layers. During synthesis, WO_x thin films are first deposited on Si/SiO₂ substrates, which are then sulfurized (under vacuum) at high temperatures (750–950 °C). An efficient route to transfer the synthesized WS₂ films onto different substrates such as quartz and transmission electron microscopy (TEM) grids has been satisfactorily developed using concentrated HF. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered WS₂ on as-grown …