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Hybrid organic-inorganic devices offer a simple and low cost route to the fabrication of resistive memory devices. However the switching and conduction mechanisms are not well established. This work compares ZnO-based devices made in the same manner but having two different nanostructure geometries, vertically aligned ZnO nanorods and randomly dispersed ZnO nanoparticles, both embedded within a PMMA host material and sandwiched between two gold electrodes in a crossbar device configuration. Both device types do not require a forming step to initiate switching and exhibit bipolar switching at relatively low operating voltages. In the low field regime both device types exhibit Ohmic behavior, however in the high field regime their switching and conduction mechanisms are distinctly different. ZnO nanorod-based devices exhibit smooth I-V curves and smooth switching behavior and a conduction …