作者
Lei Yan, Qifan Xue, Meiyue Liu, Zonglong Zhu, Jingjing Tian, Zhenchao Li, Zhen Chen, Ziming Chen, He Yan, Hin‐Lap Yip, Yong Cao
发表日期
2018/8
期刊
Advanced materials
卷号
30
期号
33
页码范围
1802509
简介
In this work, a SnO2/ZnO bilayered electron transporting layer (ETL) aimed to achieve low energy loss and large open‐circuit voltage (Voc) for high‐efficiency all‐inorganic CsPbI2Br perovskite solar cells (PVSCs) is introduced. The high‐quality CsPbI2Br film with regular crystal grains and full coverage can be realized on the SnO2/ZnO surface. The higher‐lying conduction band minimum of ZnO facilitates desirable cascade energy level alignment between the perovskite and SnO2/ZnO bilayered ETL with superior electron extraction capability, resulting in a suppressed interfacial trap‐assisted recombination with lower charge recombination rate and greater charge extraction efficiency. The as‐optimized all‐inorganic PVSC delivers a high Voc of 1.23 V and power conversion efficiency (PCE) of 14.6%, which is one of the best efficiencies reported for the Cs‐based all‐inorganic PVSCs to date. More importantly …
引用总数
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