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The adsorbed states of ethylene on the Si (100) c (4X2), Sic lOO)(2X 1), and the Si (IOO) 9" vicinal surfaces have been studied using high resolution electron energy loss spectroscopy (EELS) and low-energy electron diffraction (LEED). Ethyl. ene is nondissociatively chemisorbed on the SiC 1 (0) surface in the wide temperature range between 77 and-600 K, and is rehybridized to have a near Sp3 hybridization state. The adsorbed structure is proposed in which ethylene is di-(}'bonded to two adjacent Si atoms of the dimer at the Sic 1 (0) surface. The thermal decomposition of chemisorbed ethylene and the influence of steps on the adsorbed states of ethylene are discussed.