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The objective of this work is study the effect of Al doping on physical properties of ZnS thin films. Undoped and Al-doped ZnS films were deposited by ultrasonic spray method using atomizer on glass substrates at 500°C. The films were synthesized with different Al doping ratio ranged from 0 to 6 %. The films structure and morphology were studied by means of X-ray diffraction (XRD), scanning electron microscopy. The films optical and electrical properties were studied by UV-VIS spectrophotometer and four probes method. The structural analysis indicated that the doped ZnS films have a hexagonal structure with strong preferred orientation (002) direction for all Al concentration. The (SEM) images revealed a dense surface, highly homogeneous and better adherent to the substrate surface. The average crystallites size increases from 32 nm to 43.8 nm with increasing of Al concentrations. UV–vis–NIR spectro …