发明者
David Nicewicz, Nathan Romero, Kaila Margrey, Nicholas Tay
发表日期
2023/6/1
专利局
US
专利申请号
18159647
简介
The invention generally relates to methods of making substituted arenes via direct C–Hamination. More specifically, methods of making para-and ortho-substituted arenes via direct C–H amination are disclosed. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
学术搜索中的文章
D Nicewicz, N Romero, K Margrey, N Tay - US Patent App. 18/159,647, 2023