发明者
David Nicewicz, Nathan Romero, Kaila Margrey, Nicholas Tay
发表日期
2023/2/21
专利局
US
专利号
11584720
专利申请号
16506901
简介
The invention generally relates to methods of making substituted arenes via direct C–Hamination. More specifically, methods of making para-and ortho-substituted arenes via direct C–H amination are disclosed. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
学术搜索中的文章
D Nicewicz, N Romero, K Margrey, N Tay - US Patent 11,584,720, 2023