发明者
David Nicewicz, Nathan Romero, Kaila Margrey, Nicholas Tay
发表日期
2019/9/3
专利局
US
专利号
10399947
专利申请号
15826092
简介
The invention generally relates to methods of making sub stituted arenes via direct C-Hamination. More specifically, methods of making para-and ortho-substituted arenes via direct C-H amination are disclosed. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
学术搜索中的文章
D Nicewicz, N Romero, K Margrey, N Tay - US Patent 10,399,947, 2019