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This paper presents numerical analysis of domain wall propagation for dense embedded memory applications. Self-consistent simulation framework based on Four Component Spin Transport Model and Landau-Lifshitz-Gilbert equation is able to capture domain wall motion in terms of critical current density requirement, domain wall velocity, and power dissipation. Effect of patterned notches on memory stability, domain wall velocity and nanostrip resistance are also presented. Finally, the proposed simulation framework is used to investigate performance, scalability and organization of the domain wall motion based memory structure.