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This paper details postchemical-mechanical planarization cleanup process development for interlayer dielectric films. The scope of the paper includes defining a base line polish process and developing a post-CMP cleanup process using 150 mm wafers. The efficiency of the cleaning process was evaluated by the number of (>-0.2~ m) particles remaining on the wafer surface. The cleanup strategy included use of wet wafer transfer, postpolish buffing and rinse, basic chemistry, surfactants, HF, megasonics, and double-sided scrubbers. Postpolish buffing and rinsing were performed on the polisher. The optimized megasonic process used dilute NH4OH as the cleaning chemistry. To optimize the mechanical work done on the wafer surface during scrubbing, brush rotation speed, wafer rotation speed, brush height (force), and cleaning time were varied on both the scrubbers. Basic chemistry was used only in the …