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An amorphous indium gallium zinc oxide (IGZO)-based electrolyte-gated field-effect transistor (IGZO-EGFET) was fabricated and its feasibility as a biological sensing platform was evaluated. Herein, a 50-nm-thick IGZO thin film deposited via radio-frequency sputtering was utilized as both the active channel and biological interface of the device. The fabricated IGZO-EGFET operated by inducing a gate voltage directly through the liquid electrolyte at a low bias range (∼±1.5 V) with a subthreshold swing of 185 mV dec⁻¹. The high uniformity of electrical characteristics for the devices were confirmed with 11.4% chip-to-chip deviation by measuring the threshold voltages (V_th), and the shift of V_th was employed as a major parameter to determine the biological interactions. In order to assess IGZO-EGFETs as a biosensing platform, first, pH sensing was conducted with and without amino-silanization on the IGZO …