查看文章

Metal‐oxide‐semiconductor (MOS) capacitors with sputtering‐deposited Gd‐doped HfO₂(HGO) high k gate dielectric thin films and ALD‐derived Al₂O₃ interfacial passivation layer were fabricated on GaAs substrates. The effects of the passivation layer and the forming gas annealing (FGA) temperature were explored by studying the interfacial chemical bonding states and electrical properties of HGO/GaAs and HGO/Al₂O₃/GaAs gate stacks via x‐ray photoelectron spectroscopy (XPS), capacitance‐voltage (C–V), and leakage current density‐voltage ( J–V) measurements. Results indicated that the MOS capacitors performances were enhanced by performing FGA. The electrical analysis revealed that the 300 °C‐annealed Al/HGO/GaAs/Al MOS capacitor with 20 cycles Al₂O₃ passivation layer experienced improved electrical properties, with a dielectric constant of 44, a flat band voltage of 0.64 V, a hysteresis of 0 …