查看文章

In current work, the nontoxic, ecofriendly, water-induced (WI) gadolinium doped zirconium oxide (ZrGdO_x) gate dielectrics have been integrated with low-cost spin-coating-driven ZnSnO films for thin film transistors (TFTs) and logic circuits with superior performance for the first time. High transmittance over 90% and the formation of the metastable cubic phase of Zr₂O have qualified its potential application in transparent electronics. ZnSnO films annealed at 430 °C integrated with ZrGdO_x films demonstrate remarkable electrical properties and low-voltage operation (2 V), including a high current on/off ratio of ∼1.1 × 10⁶, large saturation carrier mobility of ∼3.1 cm² V^–1 S^–1, extreme low leakage current density of 6 × 10^–10 A cm^–2, and a slight shift in threshold voltage of 0.26 V for bias stability, respectively. To verify the practicability in logic circuits, the resistor-loaded inverters are built by using ZrGdO_x/ZnSnO TFTs …