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Solution-driven metal–oxide semiconductors have recently received much attention as a viable option for low-cost, flexible electronic devices. In this paper, a simple, environmentally friendly aqueous solution method has been adopted to deposit an ultrathin In ₂ O ₃ semiconductor layer with a thickness of about 7 nm at low temperature. Then, in combination with the advantages of atomic layer deposition (ALD) technology, an ultrathin aluminum oxide dielectric layer of about 20 nm was prepared to fabricate high-performance In ₂ O ₃ /Al ₂ O ₃ thin-film transistor (TFT) devices. The device with optimized annealing temperature of 280 °C has demonstrated an excellent electrical performance, including a high saturation mobility of 11.85 cm ² · V ⁻¹ · s ⁻¹ , a large ON/OFF current ratio of 10 ⁶ , a low threshold voltage of 0.12 V, a small hysteresis voltage of 0.05 V, and a small density of interface state of cm …