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Annealing temperature dependent microstructure, optical and electrical properties of sol-gel-deposited HfGdO high-k gate dielectric thin films on Si substrates are systematically investigated. X-ray spectroscopy (XPS) analyses have confirmed that the interfacial layer at HfGdO/Si interface is mainly silicate and the component increases with increasing the annealing temperature. Moreover, the band offsets for HfGdO/Si gate stack as a function of annealing temperature also have been determined. As a result, it can be noted that increase in valence band offset (ΔE_v) and reduction in conduction band offset (ΔE_c) have been detected. Electrical characterizations have indicated that higher annealing temperature effectively improves the electrical characteristics, such as the increased effective permittivity (k) and the decreased flat band voltage shift (ΔV_fb). However, due to the reduced ΔE_c and the appearance of …