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In this work, sputtering route has been pursued for the deposition of amorphous InGaZnO thin films under different oxygen partial pressure ratio (O_ppr). The effect of oxygen partial pressure ratio on the microstructure, optical and electrical properties and chemical bonding states of the sputtering-derived amorphous indium-gallium-zinc oxide (α-IGZO) thin films have been investigated by X-ray diffraction, X-ray photoelectron spectroscopy, UV–vis spectroscopy, and a series of electrical measurements. Measurements based on α-IGZO/SiO₂ thin film transistors (TFTs) have shown that oxygen partial pressure ratio can effectively regulate the carrier concentration, the defect trap density in the bulk channel and the interface between the channel and the gate insulator. The appropriate oxygen partial pressure ratio can reduce interface trap density (N_it) and decrease the off-state current (I_off), which can obviously improve the …