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This work focuses on electrical characterization of Ni Fe∕ Si O 2∕ Si tunnel diodes that can be used for spin injection into silicon in future spintronic devices. Capacitance-voltage characteristics show a large increase of the Si∕ Si O 2 interfacial state density compared to similar Al∕ Si O 2∕ Si diodes. This result suggests that nickel and/or iron may have diffused across the Si O 2 layer. Consistently the current-voltage experimental characteristics have been modeled by using trap assisted electron transport mechanism. These traps may be attributed to ferromagnet atoms in the oxide bulk.