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Organic–inorganic hybrid halide perovskites (OHHPs) offer excellent resistive switching (RS) properties, making them candidates for applications involving low-cost, flexible memories. However, compared with the operational stability of traditional oxide-based RS materials, the operational stability (in terms of endurance and retention) of OHHPs remains an obstacle to their use in RS memories. This paper reports an RS memory with reliable nonvolatile bipolar RS characteristics; the resistive layer is fabricated using a triple-cation perovskite owing to its structural stability and low sensitivity to the atmosphere. These devices offer operational stability over 10³ endurance cycles and a retention time of up to 10⁵ s through an adjustable forming process, which exceeds that of the most previous reports for OHHP-based RS memories with electrodes of Au, graphene, and Al. To better understand the RS mechanism, we …