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(65) Prior Publication I) ata having a GaN based LED element (2) placed thereon, setting a PO–ZnO based low melting point glass in parallel with US 2006/() 261364 A1 Nov. 23, 2006 the substrate, and carrying out a press working at a temperature of 415 C. or higher under a pressure of 60 kgf in a (30) Foreign Application Priority Data nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 10” poise, and is adhered via an Mar. 10, 2003 (JP) 2 ()() 3-() 63 ()| 5 oxide formed on the surface of the glass-containing Al, O, Jun. 5, 2003 (JP) 2 ()() 3-|| 6 () 355 substrate (3). A solid element device manufactured by the Jun. 5, 2003 (JP) 2 ()() 3-|| 6 () 367 above method can be manufactured through a glass sealing Jul. 7, 2003 (JP) 2 ()() 3-193| 82 working at a low temperature and also has a highly reliable Sep. 30, 2003 (JP) 2 ()() 3-3427 () 5 sealing structure. Sep. 30, 2003 (JP) 2 ()() 3-3427 …