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Current-voltage characteristics of Pd 2 Si/p-Si (111) Schottky barrier diodes studied over a wide temperature range (60-201 K) are shown to follow a thermionic emission-diffusion mechanism under both the forward and the reverse bias conditions. The barrier parameters as evaluated from the forward IV data reveal a decrease of zero-bias barrier height (phi b0) but an increase of ideality factor (eta) and series resistance (R s) with decrease in temperature. Moreover, the changes in phi b0, eta and R s become quite significant below~ 100 K. An In (I s/T 2) versus 1/T plot is found to fit well with two straight lines in different temperatures regimes giving an activation energy of 0.33 eV (201-107 K) and 0.24 eV (below 107 K) and an effective Richardson constant of 33 A cm-2 K-2. However, the activation energy of 0.33 eV corresponds to the zero-bias barrier height at absolute zero. An In (I s f/T 2) versus 1/eta T plot is …