作者
YJ Zeng, ZZ Ye, WZ Xu, DY Li, JG Lu, LP Zhu, BH Zhao
发表日期
2006/2/6
期刊
Applied Physics Letters
卷号
88
期号
6
页码范围
062107
出版商
AIP
简介
Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4 Ω cm, Hall mobility of 2.65 cm 2∕ V s, and hole concentration of 1.44× 10 17 cm− 3 was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer.
引用总数
学术搜索中的文章
YJ Zeng, ZZ Ye, WZ Xu, DY Li, JG Lu, LP Zhu, BH Zhao - Applied Physics Letters, 2006