作者
JG Lu, YZ Zhang, ZZ Ye, YJ Zeng, HP He, LP Zhu, JY Huang, L Wang, J Yuan, BH Zhao, XH Li
发表日期
2006/9/11
期刊
Applied physics letters
卷号
89
期号
11
页码范围
112113
出版商
AIP
简介
Li-doped ZnO films were prepared by pulsed laser deposition. The carrier type could be controlled by adjusting the growth conditions. In an ionized oxygen atmosphere, p-type ZnO was achieved, with the hole concentration of 6.04× 10 17 cm− 3 at an optimal Li content of 0.6 at.%, whereas ZnO exhibited n-type conductivity in a conventional O 2 growth atmosphere. At a Li content of more than 1.2 at.% only high-resistivity ZnO was obtained. The amount of Li introduced into ZnO and the relative concentrations of such defects as Li substitutions and interstitials could play an important role in determining the conductivity of films.
引用总数
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JG Lu, YZ Zhang, ZZ Ye, YJ Zeng, HP He, LP Zhu… - Applied Physics Letters, 2006