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The stochastic switching feature of Spin-Transfer Torque Magnetic RAM (STT-MRAM) provides an attractive knob to trade quality for energy consumption in approximate computing applications. Indeed, the quality of STT-MRAM functionalities (mainly write operation) is increased by consuming more energy to achieve a more stable write. On the other hand, in approximate computing applications, we do not need 100 percent quality for all of the data. Accordingly, in recent years, several approaches have been proposed to find a balance between output threshold quality and energy consumption in approximate computing applications employing STT-MRAM on-chip memories. While approximate computing application output qualities are highly affected by the fluctuations of the environmental-conditions or input variations, none of the previously proposed approaches have considered the effects of these fluctuations …