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We investigated the effect of irradiation on molybdenum disulfide (MoS₂) field effect transistors with 10 MeV high-energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 10¹², 10¹³, and 10¹⁴ cm^–2. For a low proton beam fluence condition of 10¹² cm^–2, the electrical properties of the devices were nearly unchanged in response to proton irradiation. In contrast, for proton beam fluence conditions of 10¹³ or 10¹⁴ cm^–2, the current level and conductance of the devices significantly decreased following proton irradiation. The electrical changes originated from proton-irradiation-induced traps, including positive oxide-charge traps in the SiO₂ layer and trap states at the interface between the MoS₂ channel and the SiO₂ layer. Our study will enhance the understanding of the influence of high-energy particles on MoS₂-based …