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We investigated the physical properties of molybdenum disulfide (MoS₂) atomic crystals with a sulfur vacancy passivation after treatment with alkanethiol molecules including their electrical, Raman, and photoluminescence (PL) characteristics. MoS₂, one of the transition metal dichalcogenide materials, is a promising two-dimensional semiconductor material with good physical properties. It is known that sulfur vacancies exist in MoS₂, resulting in the n-type behavior of MoS₂. The sulfur vacancies on the MoS₂ surface tend to form covalent bonds with sulfur-containing groups. In this study, we deposited alkanethiol molecules on MoS₂ field effect transistors (FETs) and then characterized the electrical properties of the devices before and after the alkanethiol treatment. We observed that the electrical characteristics of MoS₂ FETs dramatically changed after the alkanethiol treatment. We also observed that the Raman …