作者
Zhipeng Huang, Hui Fang, Jing Zhu
发表日期
2007/3/5
期刊
Advanced materials
卷号
19
期号
5
页码范围
744-748
出版商
WILEY‐VCH Verlag
简介
Semiconductor nanowires are promising candidates for future applications in electronics and photonics. Silicon nanowires are attracting much attention due to their technical compatibility with existing semiconductor technology.[1, 2] Silicon nanowires have been successfully incorporated in field effect transistors,[3] chemical sensors,[4] and field emitters.[5] However, for device applications, one important challenge that needs to be overcome is obtaining precise control of the size, crystallographic orientation, location, and packing manner of the nanowires. Much research effort has been devoted to the fabrication and applications of silicon nanowires. Usually, silicon nanowires are grown with random orientations and further processing is required to assemble the nanowires for specific applications.[6–9] Recently, the orientationcontrolled growth of silicon nanowire arrays,[10, 11] and the controlled growth of silicon …
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