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The authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si: P nanostructures at 5 K⁠, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 10 17 cm− 3⁠. By restricting this secondary implant to a 100× 100 nm 2 region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.