作者
Yan Ma, Bo Jiang, Elmira Moosavi-Khoonsari, Stefan Andersson, Elizabeth J Opila, GM Tranell
发表日期
2019/3/25
期刊
Industrial & Engineering Chemistry Research
卷号
58
期号
16
页码范围
6785-6795
出版商
American Chemical Society
简介
The oxidation of silicon (Si) has been extensively investigated over the past 50 years. Yet, an understanding of the mechanism and rate of liquid Si oxidation in atmospheres containing water vapor, is lacking. The effect of water vapor on the oxidation process is of particular importance in the industrial, metallurgical production and processing of liquid silicon, as a significant amount of silica fume is generated under such conditions. The generation of fume is due to the active oxidation of liquid metal in the tapping, refining, and casting steps—a major occupational health and safety challenge for the Si producers. In this work, the effect of water vapor in the atmosphere on the Si oxidation rate and fume characteristics was investigated experimentally at 1823 K in air–H2O atmospheres. Compared with oxidation in dry air, the rate of oxidation in wet air is higher, and increases to 3-fold compared to that of dry air with …
引用总数
201920202021202220231123
学术搜索中的文章
Y Ma, B Jiang, E Moosavi-Khoonsari, S Andersson… - Industrial & Engineering Chemistry Research, 2019