作者
Mubashir A Kharadi, Gul Faroz A Malik, Khurshed A Shah, Farooq A Khanday
发表日期
2019/10/16
期刊
IEEE Transactions on Electron Devices
卷号
66
期号
11
页码范围
4976-4981
出版商
IEEE
简介
In this article, we present that a bandgap can be generated in silicene nanoribbons (SiNRs) by codecorating them with lithium and chlorine atoms on two sides. Besides, using the semiempirical calculations, the performance of the functionalized SiNR as high-performance (HP) channel material for field effect transistor (FET) has been investigated. Based on the codecorated SiNR, a sub-10-nm FET is simulated and its performance parameters are analyzed. In addition, the performance of the simulated FET is compared with the sub-10-nm state-of-the-art FETs available in the literature. The comparative analysis shows that the proposed FET offers improved performance over the reported sub-10-nm FETs. The simulation results presented in this article reveal the remarkable potential of the codecorated SiNR for future sub-10-nm technology nodes.
学术搜索中的文章
MA Kharadi, GFA Malik, KA Shah, FA Khanday - IEEE Transactions on Electron Devices, 2019