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The role of the alumina barrier layer thickness (δ b) on the growth of Ni nanowires (NWs) in porous anodic alumina (PAA) has been revealed. By varying the final anodization voltage to form dendrites at the bottom of the nanoporous structure, we are able to optimize δ b (in the 2–16 nm range), allowing us to obtain a Ni pore filling percentage (f p) of almost 100% for δ b= 10 nm. However, deviations from this optimal δ b-value led to a strong decrease of f p. Moreover, an increase of the electrodeposition efficiency (EE) and NW homogeneity was also verified for δ b up to 10 nm. Such increase in nominal δ b leads to a consistent growth rate in all pores and consequently a complete and uniform nanopore filling. On the other hand, the decrease in electrodeposition efficiency visible for δ b> 10 nm is related with hydrogen evolution and dielectric breakdown of the insulator layer due to the required high deposition …