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We present an industrial tunnel oxide passivated contacts (i‐TOPCon) bifacial crystalline silicon (c‐Si) solar cell based on large‐area n‐type substrate. The interfacial thin SiO₂ is thermally growth and in situ capped by an intrinsic poly‐Si layer deposited by low‐pressure chemical vapor deposition (LPCVD). The intrinsic poly‐Si layer is doped in an industrial POCl₃ diffusion furnace to form the n⁺ poly‐Si at the rear, which shows an excellent surface passivation characteristics with J₀ = 2.6 fA/cm² when passivated by a SiN_x:H layer deposited by plasma‐enhanced chemical vapor deposition (PECVD). With an industrial fabrication process, the cells are manufactured with screen‐printed front and rear metallization, using large‐area 6‐in. n‐type Czochralski (Cz) Si wafers. We demonstrate an average front‐side efficiency greater than 23% and an open‐circuit voltage V_oc greater than 700 mV. These results are based …