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According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a Surface of an insulating layer in a first direction perpendicu lar to the surface of the insulating layer, the first to n-th semiconductor layers extending in a second direction parallel to the Surface of the insulating layer, the first to n-th semicon ductor layers being insulated from each other, a common electrode connected to the first to n-th semiconductor layers in a first end of the second direction thereof, and a layer select transistor which uses the first to n-th semiconductor layers as channels and which selects one of the first to n-th semicon ductor layers.