作者
Danilo Barrionuevo, Nora Ortega, Ashok Kumar, Ratnamala Chatterjee, James F Scott, Ram S Katiyar
发表日期
2013/12/21
期刊
Journal of Applied Physics
卷号
114
期号
23
出版商
AIP Publishing
简介
The ultra thin ferroelectric PbZr 0.52 Ti 0.48 O 3 (PZT) films with various thicknesses ranging from 100 (P100) to 10 (P10) nm were grown on La 0.67 Sr 0.33 MnO 3/(LaAlO 3) 0.3 (Sr 2 AlTaO 6) 0.7 (LSMO/LSAT)(001) substrates deposited by pulsed laser deposition technique. The x-ray diffraction patterns of the heterostructures show only (00l)(l= 1 and/or 2) reflections corresponding to the LSAT substrate, PZT, and LSMO layers. The atomic force microscopy studies show that the root mean square surface roughnesses of P100 and P10 films are 2.39 and 0.99 nm, respectively. An increase of both real (ε′) and imaginary (ε ″) permittivities was observed when thickness of PZT increases from 10 nm to 100 nm. Temperature dependent ε′ presents an anomaly, related to ferromagnetic-metal to paramagnetic-insulator transition of the LSMO, in the range of 350–500 K. The dielectric anomalies and magnetic phase …
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