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In recent years, GeTe has received tremendous attention from the research community owing to its favorable electronic and thermal properties which make it one of the best performing thermoelectric compounds. In many reports, high performance has often been achieved via various doping/alloying methods, which typically involve more than one type of dopants. In contrast to the widely used codoping strategies, this work only uses a minute amount of 1% doping, giving rise to one of the highest quality factor (1.30) at 673 K amongst GeTe, with a corresponding zT of 1.5. The high performance is attributed to simultaneously improved electronic properties via carrier concentration optimization, as well as reduced thermal conductivity via additional phonon scattering brought about by In-mass fluctuations. More importantly, we elucidate on the importance of preserving the high quality factor via choosing the right …