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GeTe is highly sought-after due to its versatility as a high-performance thermoelectric material and phase change material, as well as a ferroelectric Rashba semiconductor. Compared to most thermoelectric materials, it has an additional degree of freedom of rhombohedral–cubic phase transition at 673 K. At this temperature, the lattice thermal conductivity approaches a theoretical minimum due to ferroelectric instability while the high-energy Σ and low-energy L bands converge to give outstanding electronic properties. Therefore, modulation of the phase transition temperature allows simultaneous and synergistic tuning of the electronic and thermal transport properties to achieve high zT. In this work, Sn alloying together with Bi,Sb doping is used to suppress the phase transition to achieve a pure cubic structure with a lattice thermal conductivity of around 0.4 W m−1 K−1 and peak zT of 1.7 at 723 K with an average zT …