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Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) can be easily synthesized on SiO₂/Si substrates by chemical vapor deposition (CVD). However, for practical applications, those 2D crystals usually need to be retrieved and placed onto target substrates. Hence, a robust and effective transfer process is required. Currently, the most widely used approach for transferring CVD-grown TMDs involves the spin-coating of a poly(methyl methacrylate) (PMMA) support layer, followed by the wet etching of the SiO₂ layer in hot NaOH. This transfer process often causes substantial accumulation of polymer residues as well as severe structural damage of TMDs induced during the etching of substrates at elevated temperatures. In this work, we present an alternative approach for the transfer of CVD-grown TMDs that can address the issues mentioned above. In this process, we replaced PMMA with …