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To understand the interfacial scattering effect on the anomalous Hall effect (AHE), we prepared multilayers of using an e-beam evaporator. This structure design allowed us to investigate the effect of interfacial scattering on the AHE, while keeping the samples' thickness and composition unchanged. We measured the (magneto)transport properties of the samples in a wide temperature range (10–310 K) with magnetic fields up to 50 kOe. We found that the scaling between the anomalous Hall resistivity and longitudinal resistivity can be roughly described by with and 1.90 ± 0.04 for samples from to and samples from to , respectively. Our quantitative analysis results showed that the interfacial scattering suppresses the contribution of the intrinsic mechanism and gives rise to a side-jump contribution.