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We present a new near-infrared photodetectors fabricated based on Hg₃In₂Te₆ semiconductor compound. This ternary compound is a direct-gap n-type semiconductor with the band gap of 0.74 eV and carrier concentration about 10¹³ cm^-3 at room temperature. Surface-barrier structures a transparent conducting metal oxide electrode-interfacial chemical grown oxide-semiconductor substrate with an active area from 3 to 50 mm² have been fabricated by chemical oxidation of Hg₃In₂Te₆ surface for the potential barrier's formation. The composition of oxide layer (40% In₂O₃, 50% TeO₂, and 10% HgO) was determined using XPS analysis. Tin-doped indium oxide (ITO) film (as transparent conducting electrode) was deposited over this layer by magnetron RF sputtering technique. The devices are very sensitive to light with the wavelength from 0.4 to 1.7 micrometer. A self-calibrated photodetectors, which permit 100 …