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Yongli He (何勇礼)
Yongli He (何勇礼)
其他姓名Yongli He, Yong Li He
Research fellow in Material Science & Engineering, NTU
在 ntu.edu.sg 的电子邮件经过验证
标题
引用次数
引用次数
年份
A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility
S Wang, C Chen, Z Yu, Y He, X Chen, Q Wan, Y Shi, DW Zhang, H Zhou, ...
Advanced Materials 31 (3), 1806227, 2019
4022019
Electric-double-layer transistors for synaptic devices and neuromorphic systems
Y He, Y Yang, S Nie, R Liu, Q Wan
Journal of Materials Chemistry C 6 (20), 5336-5352, 2018
1942018
Spatiotemporal information processing emulated by multiterminal neuro‐transistor networks
Y He, S Nie, R Liu, S Jiang, Y Shi, Q Wan
Advanced Materials 31 (21), 1900903, 2019
1772019
Light stimulated IGZO-based electric-double-layer transistors for photoelectric neuromorphic devices
Y Yang, Y He, S Nie, Y Shi, Q Wan
IEEE Electron Device Letters 39 (6), 897-900, 2018
1082018
Coplanar Multigate MoS2 Electric-Double-Layer Transistors for Neuromorphic Visual Recognition
D Xie, J Jiang, W Hu, Y He, J Yang, J He, Y Gao, Q Wan
ACS applied materials & interfaces 10 (31), 25943-25948, 2018
1072018
Optoelectronic properties of printed photogating carbon nanotube thin film transistors and their application for light-stimulated neuromorphic devices
L Shao, H Wang, Y Yang, Y He, Y Tang, H Fang, J Zhao, H Xiao, K Liang, ...
ACS applied materials & interfaces 11 (12), 12161-12169, 2019
922019
Time‐tailoring van der Waals heterostructures for human memory system programming
H Chen, C Liu, Z Wu, Y He, Z Wang, H Zhang, Q Wan, W Hu, DW Zhang, ...
Advanced Science 6 (20), 1901072, 2019
842019
Emerging synaptic devices: from two-terminal memristors to multiterminal neuromorphic transistors
S Jiang, S Nie, Y He, R Liu, C Chen, Q Wan
Materials Today Nano 8, 100059, 2019
802019
A photoelectric spiking neuron for visual depth perception
C Chen, Y He, H Mao, L Zhu, X Wang, Y Zhu, Y Zhu, Y Shi, C Wan, Q Wan
Advanced Materials 34 (20), 2201895, 2022
622022
Recent progress on emerging transistor‐based neuromorphic devices
Y He, L Zhu, Y Zhu, C Chen, S Jiang, R Liu, Y Shi, Q Wan
Advanced Intelligent Systems 3 (7), 2000210, 2021
612021
Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications
Y Zhu, Y He, S Jiang, L Zhu, C Chen, Q Wan
Journal of Semiconductors 42 (3), 031101, 2021
612021
IGZO-based floating-gate synaptic transistors for neuromorphic computing
Y He, R Liu, S Jiang, C Chen, L Zhu, Y Shi, Q Wan
Journal of Physics D: Applied Physics 53 (21), 215106, 2020
592020
Oxide synaptic transistors coupled with triboelectric nanogenerators for bio-inspired tactile sensing application
C Zhang, S Li, Y He, C Chen, S Jiang, X Yang, X Wang, L Pan, Q Wan
IEEE Electron Device Letters 41 (4), 617-620, 2020
542020
Higher-order laser mode converters with dielectric metasurfaces
Y He, Z Liu, Y Liu, J Zhou, Y Ke, H Luo, S Wen
Optics Letters 40 (23), 5506-5509, 2015
442015
Oxide-based thin film transistors for flexible electronics
Y He, X Wang, Y Gao, Y Hou, Q Wan
Journal of Semiconductors 39 (1), 011005, 2018
422018
Electrolyte-gated neuromorphic transistors for brain-like dynamic computing
Y He, S Jiang, C Chen, C Wan, Y Shi, Q Wan
Journal of Applied Physics 130 (19), 2021
362021
Synergistic modulation of synaptic plasticity in IGZO-based photoelectric neuromorphic TFTs
L Zhu, Y He, C Chen, Y Zhu, Y Shi, Q Wan
IEEE Transactions on Electron Devices 68 (4), 1659-1663, 2021
362021
Neuromorphic devices for bionic sensing and perception
M Zeng, Y He, C Zhang, Q Wan
Frontiers in Neuroscience 15, 690950, 2021
352021
Dual-functional long-term plasticity emulated in IGZO-based photoelectric neuromorphic transistors
Y He, S Nie, R Liu, S Jiang, Y Shi, Q Wan
IEEE Electron Device Letters 40 (5), 818-821, 2019
342019
Flexible IZO homojunction TFTs with graphene oxide/chitosan composite gate dielectrics on paper substrates
S Nie, Y Yang, Y He, Y Shi, Q Wan
IEEE Electron Device Letters 39 (3), 363-366, 2018
332018
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