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Yong-Hoon Kim
Yong-Hoon Kim
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
在 kaist.ac.kr 的电子邮件经过验证 - 首页
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引用次数
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年份
Structures and properties of self-assembled monolayers of bistable [2] rotaxanes on Au (111) surfaces from molecular dynamics simulations validated with experiment
SS Jang, YH Jang, YH Kim, WA Goddard III, AH Flood, BW Laursen, ...
Journal of the American Chemical Society 127 (5), 1563-1575, 2005
2412005
Excitonic optical spectrum of semiconductors obtained by time-dependent density-functional theory with the exact-exchange kernel
YH Kim, A Görling
Physical Review Letters 89 (9), 096402, 2002
1542002
Modulation of the electronic properties of MXene (Ti3C2Tx) via surface-covalent functionalization with diazonium
H Jing, H Yeo, B Lyu, J Ryou, S Choi, JH Park, BH Lee, YH Kim, S Lee
ACS Nano 15 (1), 1388-1396, 2021
1222021
Molecular dynamics simulation of amphiphilic bistable [2] rotaxane Langmuir monolayers at the air/water interface
SS Jang, YH Jang, YH Kim, WA Goddard III, JW Choi, JR Heath, ...
Journal of the American Chemical Society 127 (42), 14804-14816, 2005
1122005
Extremely large gate modulation in vertical graphene/WSe2 heterojunction barristor based on a novel transport mechanism
J Shim, HS Kim, YS Shim, DH Kang, HY Park, J Lee, J Jeon, SJ Jung, ...
Advanced Materials 28 (26), 5293–5299, 2016
1102016
Exact Kohn-Sham exchange kernel for insulators and its long-wavelength behavior
YH Kim, A Görling
Physical Review B 66 (3), 035114, 2002
1052002
Edge-selenated graphene nanoplatelets as durable metal-free catalysts for iodine reduction reaction in dye-sensitized solar cells
MJ Ju, I Jeon, HM Kim, JI Choi, S Jung, J Seo, IT Choi, SH Kang, HS Kim, ...
Science Advances 2 (6), e1501459, 2016
1032016
Two-dimensional limit of exchange-correlation energy functional approximations
YH Kim, IH Lee, S Nagaraja, JP Leburton, RQ Hood, RM Martin
Physical Review B 61 (8), 5202, 2000
942000
An optogenetics‐inspired flexible van der Waals optoelectronic synapse and its application to a convolutional neural network
S Seo, JJ Lee, RG Lee, TH Kim, S Park, S Jung, HK Lee, M Andreev, ...
Advanced Materials 33 (40), 2102980, 2021
912021
First-principles study of the switching mechanism of [2] catenane molecular electronic devices
YH Kim, SS Jang, YH Jang, WA Goddard III
Physical Review Letters 94 (15), 156801, 2005
902005
Insight into the microenvironments of the metal-ionic liquid interface during electrochemical CO2 reduction
HK Lim, Y Kwon, HS Kim, J Jeon, YH Kim, JA Lim, BS Kim, J Choi, H Kim
ACS Catalalysis 8 (3), 2420, 2018
862018
Density functional theory studies of the [2] rotaxane component of the Stoddart−Heath molecular switch
YH Jang, S Hwang, YH Kim, SS Jang, WA Goddard
Journal of the American Chemical Society 126 (39), 12636-12645, 2004
852004
Ab initio study of the effect of water adsorption on the carbon nanotube field-effect transistor
D Sung, S Hong, YH Kim, N Park, S Kim, SL Maeng, KC Kim
Applied Physics Letters 89 (24), 243110, 2006
822006
Coherent lattice vibrations in mono- and few-layer WSe2
TY Jeong, BM Jin, SH Rhim, L Debbichi, J Park, YD Jang, HR Lee, ...
ACS Nano 10 (5), 5560-5566, 2016
772016
Density-functional study of small molecules within the Krieger-Li-Iafrate approximation
YH Kim, M Städele, RM Martin
Physical Review A 60 (5), 3633, 1999
761999
First-principles approach to the charge-transport characteristics of monolayer molecular-electronics devices: Application to hexanedithiolate devices
YH Kim, J Tahir-Kheli, PA Schultz, WA Goddard III
Physical Review B 73 (23), 235419, 2006
702006
Shell-filling effects and Coulomb degeneracy in planar quantum dot structures
S Nagaraja, P Matagne, VY Thean, JP Leburton, YH Kim, RM Martin
Physical Review B 56 (24), 15752, 1997
67*1997
HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2
S Lai, S Byeon, SK Jang, J Lee, BH Lee, JH Park, YH Kim, S Lee
Nanoscale 10 (39), 18758-18766, 2018
622018
Electronic and magnetic properties of carbide MXenes—the role of electron correlations
S Bae, YG Kang, M Khazaei, K Ohno, YH Kim, MJ Han, KJ Chang, ...
Materials Today Advances 9, 100118, 2021
602021
Origins of genuine Ohmic van der Waals contact between indium and MoS2
BK Kim, TH Kim, DH Choi, H Kim, K Watanabe, T Taniguchi, H Rho, ...
npj 2D Materials and Applications 5 (1), 9, 2021
602021
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