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Lizhu Ren
Lizhu Ren
Electrical and Computer Engineering, National University of Singapore
在 nus.edu.sg 的电子邮件经过验证
标题
引用次数
引用次数
年份
Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets
K Cai, Z Zhu, JM Lee, R Mishra, L Ren, SD Pollard, P He, G Liang, KL Teo, ...
Nature Electronics 3 (1), 37-42, 2020
1942020
Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3 Memristors
S Wu, L Ren, J Qing, F Yu, K Yang, M Yang, Y Wang, M Meng, W Zhou, ...
ACS applied materials & interfaces 6 (11), 8575-8579, 2014
602014
Current-induced self-switching of perpendicular magnetization in CoPt single layer
L Liu, C Zhou, T Zhao, B Yao, J Zhou, X Shu, S Chen, S Shi, S Xi, D Lan, ...
Nature Communications 13 (1), 3539, 2022
542022
Extrinsic anomalous Hall effect in epitaxial Mn4N films
M Meng, SX Wu, LZ Ren, WQ Zhou, YJ Wang, GL Wang, SW Li
Applied Physics Letters 106 (3), 2015
472015
2D magnetic MoS2-Fe3O4 hybrid nanostructures for ultrasensitive exosome detection in GMR sensor.
F Zhu, D Li, Q Ding, C Lei, L Ren, X Ding, X Sun
Biosensors & bioelectronics 147, 111787-111787, 2019
362019
Room-temperature ferromagnetic CuO thin film grown by plasma-assisted molecular beam epitaxy
KG Yang, P Hu, SX Wu, LZ Ren, M Yang, WQ Zhou, FM Yu, YJ Wang, ...
Materials Letters 166, 23-25, 2016
332016
Spin Glass State in Chemical Vapor-Deposited Crystalline Cr2Se3 Nanosheets
X Zhu, H Liu, L Liu, L Ren, W Li, L Fang, X Chen, L Xie, Y Jing, J Chen, ...
Chemistry of Materials 33 (10), 3851-3858, 2021
292021
Enlarged Mn 3s splitting and room-temperature ferromagnetism in epitaxially grown oxygen doped Mn2N0. 86 films
M Meng, SX Wu, LZ Ren, WQ Zhou, YJ Wang, GL Wang, SW Li
Journal of Applied Physics 116 (17), 2014
262014
Direct evidences of filamentary resistive switching in Pt/Nb-doped SrTiO3 junctions
M Yang, LZ Ren, YJ Wang, FM Yu, M Meng, WQ Zhou, SX Wu, SW Li
Journal of Applied Physics 115 (13), 2014
262014
Magnetic properties of Mn3O4 film with a coexistence of two preferential orientations
L Ren, W Zhou, Y Wang, M Meng, S Wu, S Li
Journal of Applied Physics 116 (2), 2014
212014
Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn4− xDyxN films
M Meng, SX Wu, WQ Zhou, LZ Ren, YJ Wang, GL Wang, SW Li
Journal of Applied Physics 118 (5), 2015
202015
Spin–Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film
L Ren, L Liu, X Shu, W Lin, P Yang, J Chen, KL Teo
ACS Applied Materials & Interfaces 13 (15), 18294-18300, 2021
182021
Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor
S Wu, L Ren, F Yu, K Yang, M Yang, Y Wang, M Meng, W Zhou, S Li
Applied Physics A 116, 1741-1745, 2014
172014
Room-temperature spin-orbit torque switching in a manganite-based heterostructure
L Liu, G Zhou, X Shu, C Li, W Lin, L Ren, C Zhou, T Zhao, R Guo, Q Xie, ...
Physical Review B 105 (14), 144419, 2022
162022
Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices
S Wu, X Chen, L Ren, W Hu, F Yu, K Yang, M Yang, Y Wang, M Meng, ...
Journal of Applied Physics 116 (7), 2014
162014
Magnetic properties of Mn3O4 film under compressive stress grown on MgAl2O4 (001) by molecular beam epitaxy
L Ren, S Wu, M Yang, W Zhou, S Li
Journal of Applied Physics 114 (5), 2013
142013
Role of Interfacial Orbital Hybridization in Spin-Orbit-Torque Generation in -Based Heterostructures
X Shu, J Zhou, L Liu, W Lin, C Zhou, S Chen, Q Xie, L Ren, Y Xiaojiang, ...
Physical Review Applied 14 (5), 054056, 2020
132020
Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy
F Yu, L Ren, M Meng, Y Wang, M Yang, S Wu, S Li
Journal of Applied Physics 115 (13), 2014
132014
Influence of Stress and Defect on Magnetic Properties of Mn3O4 Films Grown on MgAl2O4 (001) by Molecular Beam Epitaxy
L Ren, M Yang, W Zhou, S Wu, S Li
The Journal of Physical Chemistry C 118 (1), 243-249, 2014
132014
Doping effects on structural and magnetic properties of Heusler alloys Fe2Cr1-xCoxSi
Y Liu, L Ren, Y Zheng, S He, Y Liu, P Yang, H Yang, KL Teo
AIP Advances 8 (5), 2018
112018
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