Understanding the phase-change mechanism of rewritable optical media AV Kolobov, P Fons, AI Frenkel, AL Ankudinov, J Tominaga, T Uruga Nature materials 3 (10), 703-708, 2004 | 1604 | 2004 |
Interfacial phase-change memory RE Simpson, P Fons, AV Kolobov, T Fukaya, M Krbal, T Yagi, J Tominaga Nature nanotechnology 6 (8), 501-505, 2011 | 818 | 2011 |
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki Thin Solid Films 431, 369-372, 2003 | 348 | 2003 |
Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5 RE Simpson, M Krbal, P Fons, AV Kolobov, J Tominaga, T Uruga, ... Nano letters 10 (2), 414-419, 2010 | 275 | 2010 |
Uniaxial locked epitaxy of ZnO on the face of sapphire P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ... Applied Physics Letters 77 (12), 1801-1803, 2000 | 272 | 2000 |
Growth of high-quality epitaxial ZnO films on α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara Journal of Crystal Growth 201, 627-632, 1999 | 254 | 1999 |
Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE K Iwata, P Fons, A Yamada, K Matsubara, S Niki Journal of Crystal Growth 209 (2-3), 526-531, 2000 | 231 | 2000 |
Distortion-triggered loss of long-range order in solids with bonding energy hierarchy AV Kolobov, M Krbal, P Fons, J Tominaga, T Uruga Nature chemistry 3 (4), 311-316, 2011 | 229 | 2011 |
Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials KS Andrikopoulos, SN Yannopoulos, AV Kolobov, P Fons, J Tominaga Journal of Physics and Chemistry of Solids 68 (5-6), 1074-1078, 2007 | 209 | 2007 |
Ferroelectric Order Control of the Dirac-Semimetal Phase in GeTe-Sb 2 Te 3 Superlattices J Tominaga, AV Kolobov, P Fons, T Nakano, S Murakami Advanced Materials Interfaces 1 (1), 1300027-1300027, 2014 | 199 | 2014 |
Na-induced variations in the structural, optical, and electrical properties of Cu (In, Ga) Se2 thin films S Ishizuka, A Yamada, MM Islam, H Shibata, P Fons, T Sakurai, K Akimoto, ... Journal of applied physics 106 (3), 2009 | 193 | 2009 |
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ... Applied physics letters 79 (25), 4139-4141, 2001 | 190 | 2001 |
Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2 S Chichibu, T Mizutani, K Murakami, T Shioda, T Kurafuji, H Nakanishi, ... Journal of Applied Physics 83 (7), 3678-3689, 1998 | 185 | 1998 |
ZnO growth on Si by radical source MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ... Journal of Crystal Growth 214, 50-54, 2000 | 172 | 2000 |
Direct Observation of Nitrogen Location in Molecular Beam Epitaxy Grown<? format?> Nitrogen-Doped ZnO P Fons, H Tampo, AV Kolobov, M Ohkubo, S Niki, J Tominaga, R Carboni, ... Physical review letters 96 (4), 045504, 2006 | 168 | 2006 |
Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures H Tampo, H Shibata, K Maejima, A Yamada, K Matsubara, P Fons, ... Applied Physics Letters 93 (20), 2008 | 163 | 2008 |
Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ... Solar energy materials and solar cells 87 (1-4), 541-548, 2005 | 158 | 2005 |
Band-gap modified Al-doped Zn1− xMgxO transparent conducting films deposited by pulsed laser deposition K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki Applied physics letters 85 (8), 1374-1376, 2004 | 156 | 2004 |
Local structure of crystallized GeTe films AV Kolobov, J Tominaga, P Fons, T Uruga Applied physics letters 82 (3), 382-384, 2003 | 150 | 2003 |
Two-dimensional electron gas in Zn polar ZnMgO∕ ZnO heterostructures grown by radical source molecular beam epitaxy H Tampo, H Shibata, K Matsubara, A Yamada, P Fons, S Niki, ... Applied physics letters 89 (13), 2006 | 145 | 2006 |