| New mode of IR detection using quantum wells DD Coon, RPG Karunasiri Applied Physics Letters 45 (6), 649-651, 1984 | 339 | 1984 |
| Characteristics of InGaAs quantum dot infrared photodetectors SJ Xu, SJ Chua, T Mei, XC Wang, XH Zhang, G Karunasiri, WJ Fan, ... Applied physics letters 73 (21), 3153-3155, 1998 | 211 | 1998 |
| Real-time imaging using a 2.8 THz quantum cascade laser and uncooled infrared microbolometer camera BN Behnken, G Karunasiri, DR Chamberlin, PR Robrish, J Faist Optics letters 33 (5), 440-442, 2008 | 161 | 2008 |
| Si1−xGex/Si multiple quantum well infrared detector RPG Karunasiri, JS Park, KL Wang Applied physics letters 59 (20), 2588-2590, 1991 | 151 | 1991 |
| Bi-material terahertz sensors using metamaterial structures F Alves, D Grbovic, B Kearney, NV Lavrik, G Karunasiri Optics express 21 (11), 13256-13271, 2013 | 146 | 2013 |
| Tunable infrared modulator and switch using Stark shift in step quantum wells RPG Karunasiri, YJ Mii, KL Wang IEEE electron device letters 11 (5), 227-229, 1990 | 137 | 1990 |
| Strong terahertz absorption using SiO2/Al based metamaterial structures F Alves, B Kearney, D Grbovic, NV Lavrik, G Karunasiri Applied Physics Letters 100 (11), 2012 | 105 | 2012 |
| Intersubband absorption in Si1−xGex/Si multiple quantum wells RPG Karunasiri, JS Park, YJ Mii, KL Wang Applied physics letters 57 (24), 2585-2587, 1990 | 104 | 1990 |
| Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layer SS Rhee, JS Park, RPG Karunasiri, Q Ye, KL Wang Applied physics letters 53 (3), 204-206, 1988 | 104 | 1988 |
| Microelectromechanical systems bimaterial terahertz sensor with integrated metamaterial absorber F Alves, D Grbovic, B Kearney, G Karunasiri Optics letters 37 (11), 1886-1888, 2012 | 101 | 2012 |
| Large Stark shifts of the local to global state intersubband transitions in step quantum wells YJ Mii, RPG Karunasiri, KL Wang, M Chen, PF Yuh Applied physics letters 56 (20), 1986-1988, 1990 | 101 | 1990 |
| NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions FDP Alves, G Karunasiri, N Hanson, M Byloos, HC Liu, A Bezinger, ... Infrared physics & technology 50 (2-3), 182-186, 2007 | 99 | 2007 |
| Intervalence‐subband transition in SiGe/Si multiple quantum wells− normal incident detection JS Park, RPG Karunasiri, KL Wang Applied physics letters 61 (6), 681-683, 1992 | 99 | 1992 |
| Normal incidence infrared detector using p‐type SiGe/Si multiple quantum wells JS Park, RPG Karunasiri, KL Wang Applied physics letters 60 (1), 103-105, 1992 | 99 | 1992 |
| Observation of large oscillator strengths for both 1→ 2 and 1→ 3 intersubband transitions of step quantum wells YJ Mii, KL Wang, RPG Karunasiri, PF Yuh Applied physics letters 56 (11), 1046-1048, 1990 | 79 | 1990 |
| Fabrication of a microelectromechanical directional sound sensor with electronic readout using comb fingers M Touse, J Sinibaldi, K Simsek, J Catterlin, S Harrison, G Karunasiri Applied Physics Letters 96 (17), 2010 | 78 | 2010 |
| Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions G Karunasiri, JS Park, J Chen, R Shih, JF Scheihing, MA Dodd Applied physics letters 67 (18), 2600-2602, 1995 | 78 | 1995 |
| Narrowband terahertz emitters using metamaterial films F Alves, B Kearney, D Grbovic, G Karunasiri Optics express 20 (19), 21025-21032, 2012 | 77 | 2012 |
| Highly sensitive infrared temperature sensor using self-heating compensated microbolometers MVS Ramakrishna, G Karunasiri, P Neuzil, U Sridhar, WJ Zeng Sensors and Actuators A: Physical 79 (2), 122-127, 2000 | 74 | 2000 |
| SiGe/Si electronics and optoelectronics KL Wang, RPG Karunasiri Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 73 | 1993 |
